RRAM-Info: the RRAM experts

RRAM-Info is a news hub and knowledge center for Resistive RAM technologies.

Resistive RAM is a non-volatile computer memory that uses materials that change their resistance - or memristors. RRAM is still in its early stages, but it may enable fast, efficient and small memory chips

Recent RRAM News

Weebit Nano raises $6.6 million AUD in a two-tranche placement

Israel-based RRAM developer Weebit Nano announced it has raised $6.6 million AUD via a two-tranche placement. The funds will be used to complete its memory module development, transfer the technology to a production fab and continue its work on discrete RRAM memory technology.

Weebit packaged RRAM chip photo

Weebit says that the placement was priced at a discount of around 22% to its current share price. The company now hopes to accelerate its development work and make up lost time from the COVID-19 shutdown.

Picosun provides ALD equipment to A*STAR IME's ReRAM project

Singapore's A*STAR Institute of Microelectronics (IME) announced that it has strengthened its collaboration with Picosun Group in the area of next-generation memories.

Picosun provided ALD solutions and consultancy to IME to assist in the development work on FeRAM and ReRAM technologies.Picosun's ALD equipment supports 12" wafer processing.

Weebit and SiEn Integration Circuits sign agreement for RRAM collaboration

Israel-based SiOx RRAM developer Weebit Nano announced that it has signed a letter-of-intent with China-based SiEn QingDao Integrated Circuits to jointly investigate ways in which Weebit’s
technology can be used in SiEn’s products.

Weebit Nano RRAM chip prototypes photo

SiEn is a Communal Integrated Device Manufacturer (CIDM) company, which aggregates companies with similar target markets, technologies, production lines and customers to share common manufacturing technology production goals. Weebit hopes that its RRAM technology will
enhance SiEn’s competitive position by adding significant non-volatile memory capability to its future products.

Weebit announces a program to enter the discrete memory market

Israel-based RRAM developer Weebit Nano Announced that it is launching a new program to address the needs of the discrete memory market

Weebit packaged RRAM chip photo

Weebit says it is accelerating its entry into the discrete, stand-alone, memory chip market. Weebit says that a key element required for discrete memory chips is the selector, which helps isolate the memory cells so that only the specific cells which should be modified actually are, and all the other cells are disconnected and not impacted.

XTX verifies Weebit's ReRAM memory technology

In August 2019 Israel-based SiOx RRAM developer Weebit Nano announced that it has signed a letter of intent with XTX Technology to investigating ways in which XTX can use Weebit’s technology in its products. Today Weebit announced that XTX verified the technical parameters of Weebit's ReRAM technology and reproduced the results previously achieved with Leti.

Weebit Nano RRAM chip prototypes photo

Weebit says that this successful external testing with XTX was achieved four months ahead of schedule. The two companies are now investigating ways to integrate Weebit's ReRAM memroy technology into XTX Products.

Sony to aims to commercialize 128GB and 256GB ReRAM drives in 2020

Sony announced that it is accelerating its RRAM ("Cross Point ReRAM") development with an aim to commercialize it in 2020. Sony says that its ReRAM will be cheaper than NAND, and also faster, consumer less power and heat. Sony's efforts at this stage are to develop a smart low-power ReRAM controller, reduce the power consumption and manage the thermal issues.

Sony ReRAM slide at Persistant Memory Summit 2019

As can be seen in the slide above (click to enlarge), Sony says its 128GB ReRAM drives will feature 25.6 GB/s read times, 9.6 GB/s write times and will support PCIe gen5 x 5. The power consumption target is 14.6W. The larger 16-chip 256GB drives will be faster at 51.2 GB/s read and 19.2 GB/s write. The power consumption will be 27.2W.